ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.Size:1138K _upd 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS 1 2 BVCEO min 40 V 50 V 3 IC (max) 0.8 A TO-18 3 3 hFE at 10 V - 150 mA 100 4 1 1 2 2 Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25☌ unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VE 1.2.
Ideally suited for High Speed Switching and General Purpose Applications.Size:563K _upd SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 Cross-Reference Search 2N2222 Datasheet (PDF) 1.1.
Operating Junction Temperature (Tj): 175 ☌ Transition Frequency (ft): 250 MHz Collector Capacitance (Cc): 8 pF Forward Current Transfer Ratio (hFE), MIN: 100 Noise Figure, dB: - Package: TO18. Persamaan Transistor Amplifier Sk A769 Average ratng: 5,8/10 4636reviewsĢN2222 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N2222 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.5 W Maximum Collector-Base Voltage Vcb : 60 V Maximum Collector-Emitter Voltage Vce : 30 V Maximum Emitter-Base Voltage Veb : 5 V Maximum Collector Current Ic max : 0.8 A Max.
